Title | Numerical analysis for the growth of GaN layer in MOCVD reactor |
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Publication year | 2003 |
Author | Chang-Yong Shin, Byung-Joon Baek, Cheul-Ro Lee, Bokchoon Park, Jeong-Mo Yoon and Keun-Seop Park |
Journal | Journal of Crystal Growth (1.797) |
JCR factor | 57.69 % |
Vol | Vol.247, pp.301-312 |
DOI | https://doi.org/10.1016/S0022-0248(02)02020-1 |