Title | High quality GaN/Si(111) epitaxy grown with various Al₀.₃Ga₀.₇N/GaN superlattice as intermediate layer by MOCVD |
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Publication year | 2003 |
Author | Cheul-Ro Lee and Seong-Hwan Jang |
Journal | Journal of Crystal Growth (IF: 1.797) |
JCR factor | 57.69 % |
Vol | Vol.253, pp.64-70 |
DOI |